Datasheet > SI6466ADQ_08

SI6466ADQ_08

更新时间： 2024-09-17 09:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	76K
描述
N-Channel 2.5-V (G-S) MOSFET

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数据手册

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SI6466ADQ_08 数据手册

Si6466ADQ

Vishay Siliconix

N-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

I_D(A)

8.1

TrenchFET^®Power MOSFETs

0.014 at V_GS= 4.5 V

0.020 at V_GS= 2.5 V

100 % R_gTested

RoHS

6.6

COMPLIANT

TSSOP-8

* Source Pins 2, 3, 6 and 7

must be tied common.

Top View

N-Channel MOSFET

Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

8.1

6.6

6.8

Continuous Drain Current (T_J= 150 °C)^a

I_D

5.4

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)^a

1.35

1.5

0.95

1.05

0.67

- 55 to 150

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

1.0

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

120

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot

R_thJA

Steady State

100

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71182

S-80682-Rev. C, 31-Mar-08

www.vishay.com

12 3 4 5

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