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SI6475DQ-E3 PDF预览

SI6475DQ-E3

更新时间: 2024-11-07 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
5页 79K
描述
TRANSISTOR 7800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal

SI6475DQ-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):7.8 A
最大漏极电流 (ID):7.8 A最大漏源导通电阻:0.011 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SI6475DQ-E3 数据手册

 浏览型号SI6475DQ-E3的Datasheet PDF文件第2页浏览型号SI6475DQ-E3的Datasheet PDF文件第3页浏览型号SI6475DQ-E3的Datasheet PDF文件第4页浏览型号SI6475DQ-E3的Datasheet PDF文件第5页 
                                                                                                                           
_C/W  
Si6475DQ  
Vishay Siliconix  
New Product  
P-Channel 12-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.011 @ V = –4.5 V  
–10  
–9  
GS  
0.0135 @ V = –2.5 V  
GS  
–12  
0.017 @ V = –1.8 V  
–8  
GS  
S*  
TSSOP-8  
G
D
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7  
must be tied common.  
S
S
Si6475DQ  
G
Top View  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–12  
DS  
GS  
V
V
"8  
T
= 25_C  
= 70_C  
–10  
–8  
–7.8  
–6.2  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
–30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
–1.5  
1.75  
1.14  
–0.95  
1.08  
0.69  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
55  
95  
35  
70  
115  
45  
a
Maximum Junction-to-Ambient  
R
thJA  
thJF  
Maximum Junction-to-Foot (Drain)  
R
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71294  
S-01889—Rev. A, 28-Aug-00  
www.vishay.com  
1

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