5秒后页面跳转
SI6467DQ-E3 PDF预览

SI6467DQ-E3

更新时间: 2024-09-17 14:44:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 63K
描述
Transistor

SI6467DQ-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.83配置:Single
最大漏极电流 (Abs) (ID):8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.5 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

SI6467DQ-E3 数据手册

 浏览型号SI6467DQ-E3的Datasheet PDF文件第2页浏览型号SI6467DQ-E3的Datasheet PDF文件第3页浏览型号SI6467DQ-E3的Datasheet PDF文件第4页浏览型号SI6467DQ-E3的Datasheet PDF文件第5页 
Si6467DQ  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.014 @ V = -4.5 V  
"8.0  
"7.0  
"5.8  
GS  
0.019 @ V = -2.5 V  
GS  
-12  
0.027 @ V = -1.8 V  
GS  
S
*
TSSOP-8  
G
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
D
*Source Pins 2, 3, 6 and 7  
must be tied common  
Si6467DQ  
Top View  
D
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
-12  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
V
GS  
"8  
T
= 25_C  
= 70_C  
"8.0  
"6.5  
"30  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
-1.5  
T
= 25_C  
= 70_C  
1.5  
A
a, b  
Maximum Power Dissipation  
P
W
D
T
A
1.0  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
83  
a
Maximum Junction-to-Ambient  
R
thJA  
_
C/W  
Steady State  
90  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v 10 sec.  
Document Number: 70829  
S-59526—Rev. A, 19 Oct-98  
www.vishay.com  
2-1  

与SI6467DQ-E3相关器件

型号 品牌 获取价格 描述 数据表
SI6467DQ-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
SI6467DQ-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
SI6469DQ VISHAY

获取价格

P-Channel 1.8-V (G-S) MOSFET
SI6469DQ-E3 VISHAY

获取价格

TRANSISTOR 6 A, 8 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET General Purpose
SI6469DQ-T1 VISHAY

获取价格

Power Field-Effect Transistor, 6A I(D), 8V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal
SI6469DQ-T1-E3 VISHAY

获取价格

Trans MOSFET P-CH 8V 6A 8-Pin TSSOP T/R
SI6473DQ VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI6473DQ-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI6473DQ-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SI6475DQ VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET