是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.35 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 12 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.014 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI6467DQ-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o | |
SI6469DQ | VISHAY |
获取价格 |
P-Channel 1.8-V (G-S) MOSFET | |
SI6469DQ-E3 | VISHAY |
获取价格 |
TRANSISTOR 6 A, 8 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET General Purpose | |
SI6469DQ-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 8V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal | |
SI6469DQ-T1-E3 | VISHAY |
获取价格 |
Trans MOSFET P-CH 8V 6A 8-Pin TSSOP T/R | |
SI6473DQ | VISHAY |
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P-Channel 20-V (D-S) MOSFET | |
SI6473DQ-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI6473DQ-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, | |
SI6475DQ | VISHAY |
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P-Channel 12-V (D-S) MOSFET | |
SI6475DQ-E3 | VISHAY |
获取价格 |
TRANSISTOR 7800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpos |