5秒后页面跳转
SI6467DQ-T1 PDF预览

SI6467DQ-T1

更新时间: 2024-11-07 14:44:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
5页 63K
描述
Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

SI6467DQ-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:12 V
最大漏极电流 (ID):8 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
Base Number Matches:1

SI6467DQ-T1 数据手册

 浏览型号SI6467DQ-T1的Datasheet PDF文件第2页浏览型号SI6467DQ-T1的Datasheet PDF文件第3页浏览型号SI6467DQ-T1的Datasheet PDF文件第4页浏览型号SI6467DQ-T1的Datasheet PDF文件第5页 
Si6467DQ  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.014 @ V = -4.5 V  
"8.0  
"7.0  
"5.8  
GS  
0.019 @ V = -2.5 V  
GS  
-12  
0.027 @ V = -1.8 V  
GS  
S
*
TSSOP-8  
G
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
D
*Source Pins 2, 3, 6 and 7  
must be tied common  
Si6467DQ  
Top View  
D
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
-12  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
V
GS  
"8  
T
= 25_C  
= 70_C  
"8.0  
"6.5  
"30  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
-1.5  
T
= 25_C  
= 70_C  
1.5  
A
a, b  
Maximum Power Dissipation  
P
W
D
T
A
1.0  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
83  
a
Maximum Junction-to-Ambient  
R
thJA  
_
C/W  
Steady State  
90  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v 10 sec.  
Document Number: 70829  
S-59526—Rev. A, 19 Oct-98  
www.vishay.com  
2-1  

与SI6467DQ-T1相关器件

型号 品牌 获取价格 描述 数据表
SI6467DQ-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
SI6469DQ VISHAY

获取价格

P-Channel 1.8-V (G-S) MOSFET
SI6469DQ-E3 VISHAY

获取价格

TRANSISTOR 6 A, 8 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET General Purpose
SI6469DQ-T1 VISHAY

获取价格

Power Field-Effect Transistor, 6A I(D), 8V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal
SI6469DQ-T1-E3 VISHAY

获取价格

Trans MOSFET P-CH 8V 6A 8-Pin TSSOP T/R
SI6473DQ VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI6473DQ-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI6473DQ-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SI6475DQ VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET
SI6475DQ-E3 VISHAY

获取价格

TRANSISTOR 7800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpos