SI6435

更新时间： 2024-11-17 22:21:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	111K
描述
30V P-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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SI6435 数据手册

September 2001

Si6435DQ

30V P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

• –4.5 A, –30 V R_DS(ON)= 40 mΩ @ V_GS= –10 V

R_DS(ON)= 70 mΩ @ V_GS= –4.5 V

• Extended V_GSSrange (±20V) for battery applications

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Battery protection

• DC/DC conversion

• Power management

• Load switch

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–30

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

(Note 1)

–4.5

– Pulsed

–30

1.3

P_D

Power Dissipation

(Note 1a)

(Note 1b)

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

R_θJA

°C/W

114

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6435

Si6435DQ

13’’

16mm

3000 units

Si6435DQ Rev B(W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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