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SI6435ADQ-T1-E3 PDF预览

SI6435ADQ-T1-E3

更新时间: 2024-11-19 00:35:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 203K
描述
P-Channel 30-V (D-S) MOSFET

SI6435ADQ-T1-E3 数据手册

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Si6435ADQ  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
ꢀ.ꢀ  
TrenchFET® Power MOSFETs  
0.030 at VGS = - 10 V  
0.0ꢀꢀ at VGS = - 4.ꢀ V  
- 30  
RoHS  
4.1  
COMPLIANT  
S*  
G
TSSOP-8  
* Source Pins 2, 3, 6 and 7  
must be tied common.  
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
Si6435ADQ  
D
Top View  
P-Channel MOSFET  
Ordering Information: Si643ꢀADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 2ꢀ °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 30  
20  
V
VGS  
TA = 2ꢀ °C  
TA = 70 °C  
ꢀ.ꢀ  
4.ꢀ  
4.7  
Continuous Drain Current (TJ = 1ꢀ0 °C)a  
ID  
3.7  
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
30  
Continuous Source Current (Diode Conduction)a  
- 1.3ꢀ  
1.ꢀ  
- 0.9ꢀ  
1.0ꢀ  
TA = 2ꢀ °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
1.0  
0.67  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- ꢀꢀ to 1ꢀ0  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
6ꢀ  
Maximum  
Unit  
t 10 s  
83  
120  
ꢀ2  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
100  
43  
°C/W  
RthJF  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71104  
S-80682-Rev. B, 31-Mar-08  
www.vishay.com  
1

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