Datasheet > SI6433BDQ_08

SI6433BDQ_08

更新时间： 2024-11-18 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	101K
描述
P-Channel 2.5-V (G-S) MOSFET

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中文翻译

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数据手册

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SI6433BDQ_08 数据手册

Si6433BDQ

Vishay Siliconix

P-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 4.8

- 3.6

0.040 at V_GS= - 4.5 V

0.070 at V_GS= - 2.5 V

- 12

RoHS

COMPLIANT

TSSOP-8

* Source Pins 2, 3, 6 and 7

must be tied common.

Top View

Ordering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 12

V_GS

T_A= 25 °C

T_A= 70 °C

- 4.8

- 3.9

- 4.0

- 3.2

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

- 20

Continuous Source Current (Diode Conduction)^a

- 1.35

1.5

- 0.95

1.05

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

1.0

0.67

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

120

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

100

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72511

S-80682-Rev. C, 31-Mar-08

www.vishay.com

12 3 4 5 6

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