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SI6426

更新时间: 2024-11-17 22:21:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 165K
描述
20V N-Channel PowerTrench MOSFET

SI6426 数据手册

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October 2001  
Si6426DQ  
20V N-Channel PowerTrenchMOSFET  
General Description  
Features  
This N-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications requiring a wide range of gate drive voltage  
ratings (2.5V to 8V).  
5.4 A, 20 V  
RDS(ON) = 35 m@ VGS = 4.5 V  
DS(ON) = 40 m@ VGS = 2.5 V  
R
Extended VGSS range ( 8V) for battery applications  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
Battery protection  
DC/DC conversion  
Power management  
Load switch  
Low profile TSSOP-8 package  
D
S
5
6
7
8
4
3
2
1
S
D
G
S
S
D
TSSOP-8  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
20  
V
V
A
VGSS  
Gate-Source Voltage  
8
5.4  
ID  
Drain Current – Continuous  
(Note 1)  
– Pulsed  
Power Dissipation  
30  
1.4  
1.1  
PD  
(Note 1a)  
(Note 1b)  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
87  
114  
RθJA  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
6426  
Si6426DQ  
13’’  
16mm  
3000 units  
Si6426DQ Rev B(W)  
2001 Fairchild Semiconductor Corporation  

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