Datasheet > Si4626ADY

Si4626ADY

更新时间： 2023-12-06 20:09:12

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	170K
描述
N-Channel 30-V (D-S) MOSFET

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Si4626ADY 数据手册

Si4626ADY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Available

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

0.0033 at V_GS= 10 V

0.0041 at V_GS= 4.5 V

•

37 nC

26.3

APPLICATIONS

•

Low-Side DC/DC Conversion

- Notebook

- Gaming

SO-8

Top View

N-Channel MOSFET

Ordering Information: Si4626ADY-T1-E3 (Lead (Pb)-free)

Si4626ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

T_C= 25 °C

_C= 70 °C

_A= 25 °C

22.6

Continuous Drain Current (T_J= 150 °C)

I_D

21.5^{b, c}

17.1^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

5.4

2.7^{b, c}

Continuous Source-Drain Diode Current

I_AS

E_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

6.0

3.3

3.0^{b, c}

1.9^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

T_A= 70 °C

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 69937

S09-0131-Rev. B, 02-Feb-09

www.vishay.com

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