Datasheet > SI4652DY-T1-GE3

SI4652DY-T1-GE3

更新时间： 2024-01-08 00:52:54

品牌	Logo	应用领域
威世 - VISHAY		光电二极管
页数	文件大小	规格书
7页	96K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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技术参数
数据手册

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SI4652DY-T1-GE3 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

SI4652DY-T1-GE3 数据手册

Si4652DY

Vishay Siliconix

N-Channel 25-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

0.0035 at V_GS= 10 V

0.0042 at V_GS= 4.5 V

35.5 nC

•

APPLICATIONS

•

Notebook Core Voltage

SO-8

Top View

Ordering Information: Si4652DY-T1-E3 (Lead (Pb)-free)

Si4652DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

_C= 25 °C

T_C= 70 °C

_A= 25 °C

22.6

Continuous Drain Current (T_J= 150 °C)

I_D

21.5^{b, c}

17.1^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

5.4

2.7^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

L = 0.1 mH

_C= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Avalanche Energy

6.0

3.3

3.0^{b, c}

1.9^{b, c}

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 69256

S09-0228-Rev. B, 09-Feb-09

www.vishay.com

12 3 4 5 6 7

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