Datasheet > SI4684DY_06

SI4684DY_06

更新时间： 2024-11-02 06:11:35

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威世 - VISHAY		/
页数	文件大小	规格书
7页	114K
描述
N-Channel 30-V (D-S) MOSFET

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SI4684DY_06 数据手册

Si4684DY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

Extremely Low Q_gdWFET^®Technology

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^a

for Low Switching Losses

TrenchFET^®Power MOSFET

100 % R_gTested

0.0094 at V_GS= 10 V

0.0115 at V_GS= 4.5 V

•

14 nC

RoHS

COMPLIANT

APPLICATIONS

•

High-Side DC/DC Conversion

- Notebook

- Server

SO-8

Top View

N-Channel MOSFET

Ordering Information:

Si4684DY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

12.9

12^b,c

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

9.5^b,c

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

4.0

2.3^b,c

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

4.45

2.85

2.50^b,c

P_D

Maximum Power Dissipation

1.6^b,c

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^b,d

R_thJA

t ≤ 10 sec

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under Steady State conditions is 90 °C/W.

Document Number: 73324

S-61013-Rev. B, 12-Jun-06

www.vishay.com

12 3 4 5 6 7

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