Datasheet > Si4686DY

Si4686DY

更新时间： 2023-12-06 20:00:56

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
N-Channel 30-V (D-S) MOSFET

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Si4686DY 数据手册

Si4686DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^a

18.2

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Available

0.0095 at V_GS= 10 V

0.014 at V_GS= 4.5 V

•

Extremely Low Q_gdWFET^®Technology

for Low Switching Losses

9.2 nC

•

TrenchFET^®Power MOSFETs

100 % R_gTested

SO-8

APPLICATIONS

•

High-Side DC/DC Conversion

- Notebook

- Server

Top View

Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free)

Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

18.2

14.5

Continuous Drain Current (T_J= 150 °C)

I_D

13.8^{b, c}

T_A= 25 °C

11^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

4.3

Continuous Source-Drain Diode Current

2.5^{b, c}

I_AS

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

5.2

3.3

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

3.0^{b, c}

1.9^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

t ≤ 10 s

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

Document Number: 73422

S09-0228-Rev. B, 09-Feb-09

www.vishay.com

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