SI4688DY-T1-GE3 PDF预览

SI4688DY-T1-GE3

更新时间: 2025-07-22 19:55:27
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
9页 243K
描述
Small Signal Field-Effect Transistor, 8.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

SI4688DY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:unknown
风险等级:5.7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):8.9 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SI4688DY-T1-GE3 数据手册

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New Product  
Si4688DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
12  
Available  
0.011 at VGS = 10 V  
0.0145 at VGS = 4.5 V  
TrenchFET® Power MOSFET  
100 % Rg Tested  
100 % UIS Tested  
30  
9.8  
APPLICATIONS  
Notebook PC  
- Core  
D
- System Power  
SO-8  
D
S
1
2
3
4
8
7
6
5
D
D
D
S
S
G
G
Top View  
S
Ordering Information:  
Si4688DY-T1-E3 (Lead (Pb)-free)  
Si4688DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
TA = 70 °C  
12  
8.9  
Continuous Drain Current (TJ = 150 °C)a  
ID  
9.5  
7.1  
IDM  
IS  
Pulsed Drain Current  
40  
A
Continuous Source Current (Diode Conduction)a  
Single Pulse Avalanche Current  
Avalanche Energy  
2.3  
1.3  
IAS  
EAS  
20  
L = 0.1 mH  
20  
mJ  
W
TA = 25 °C  
TA = 70 °C  
2.5  
1.6  
1.4  
Maximum Power Dissipationa  
PD  
0.9  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
43  
Maximum  
Unit  
t 10 s  
50  
90  
25  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
73  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
19  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 69996  
S09-0394-Rev. B, 09-Mar-09  
www.vishay.com  
1

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