Datasheet > SI4684DY-E3

SI4684DY-E3

更新时间： 2024-11-02 20:06:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	99K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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SI4684DY-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	配置：	Single
最大漏极电流 (Abs) (ID)：	9.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	4.45 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

SI4684DY-E3 数据手册

Si4684DY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D Extremely Low Q_gdWFETr Technology for

Low Switching Losses

D TrenchFETr Power MOSFET

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)^a

Q_g(Typ)

Product Is

Completely

Pb-free

0.0094 @ V = 10 V

14 nC

D RoHS Compliant

APPLICATIONS

0.0115 @ V = 4.5 V

D High-Side DC/DC Conversion

− Notebook

− Server

SO-8

Top View

N-Channel MOSFET

Ordering Information: Si4684DY—E3

Si4684DY-T1—E3 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

= 25_C

= 70_C

12.9

Continuous Drain Current (T = 150__C)

b, c

9.5

Pulsed Drain Current

= 25_C

= 70_C

= 25_C

= 70_C

4.0

Continuous Source-Drain Diode Current

b, c

2.3

4.45

2.85

Maximum Power Dissipation

b, c

2.50

b, c

1.6

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

b, d

Maximum Junction-to-Ambient

t p 10 sec

thJA

thJF

C/W

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on T = 25_C.

b. Surface mounted on 1” x 1” FR4 board.

c. t = 10 sec

d. Maximum under steady state conditions is 90 _C/W.

Document Number: 73324

S-50525—Rev. A, 28-Mar-05

www.vishay.com

12 3 4 5 6 7

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