Datasheet > SI4666DY

SI4666DY

更新时间： 2024-02-07 16:04:27

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威世 - VISHAY		/
页数	文件大小	规格书
10页	261K
描述
N-Channel 25 V (D-S) MOSFET

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SI4666DY 数据手册

Si4666DY

Vishay Siliconix

N-Channel 25 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

Definition

0.010 at V_GS= 10 V

0.011 at V_GS= 4.5 V

0.014 at V_GS= 2.5 V

16.5

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

15.8

10.7 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Synchronous Buck Converter

•

DC/DC Converter

SO-8

Top View

N-Channel MOSFET

Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

16.5

9.3

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

11.5^b,c

9.4^b,c

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

4.5

2.3^b,c

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Avalanche Energy

I_AS

L = 0.1 mH

E_AS

11.25

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.2

Maximum Power Dissipation

P_D

2.50^b,c

1.6^b,c

- 55 to 150

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

Document Number: 66587

S10-1044-Rev. A, 03-May-10

www.vishay.com

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