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SI4682DY-T1-GE3 PDF预览

SI4682DY-T1-GE3

更新时间: 2024-09-30 21:11:43
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 246K
描述
Power Field-Effect Transistor, 16A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SI4682DY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71雪崩能效等级(Eas):20 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.0094 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):4.45 W最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4682DY-T1-GE3 数据手册

 浏览型号SI4682DY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4682DY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4682DY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4682DY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4682DY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4682DY-T1-GE3的Datasheet PDF文件第7页 
Si4682DY  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)a  
16  
Qg (Typ.)  
Definition  
0.0094 at VGS = 10 V  
0.0135 at VGS = 4.5 V  
30  
11 nC  
Extremely Low Qgd for Low Switching Losses  
TrenchFET® Power MOSFET  
100 % Rg Tested  
13  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
High-Side DC/DC Conversion  
- Notebook  
SO-8  
- Server  
D
D
S
1
2
3
4
8
D
D
D
S
S
G
7
6
5
G
Top View  
S
Ordering Information: Si4682DY-T1-E3 (Lead (Pb)-free)  
Si4682DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Limit  
30  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
20  
VGS  
16  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
12.9  
12b, c  
9.5b, c  
50  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 70 °C  
A
Pulsed Drain Current  
IDM  
IS  
4.0  
2.3b, c  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
20  
Single Pulse Avalanche Current  
Avalanche Energy  
IAS  
L = 0.1 mH  
20  
EAS  
mJ  
W
4.45  
2.85  
2.50b, c  
1.6b, c  
- 55 to 150  
TC = 25 °C  
TC = 70 °C  
Maximum Power Dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
36  
Maximum  
Unit  
Maximum Junction-to-Ambientb, d  
t 10 s  
Steady State  
50  
28  
°C/W  
Maximum Junction-to-Foot (Drain)  
RthJF  
22  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1” x 1” FR4 board.  
c. t = 10 s.  
d. Maximum under steady state conditions is 90 °C/W.  
Document Number: 73317  
S11-0209-Rev. D, 14-Feb-11  
www.vishay.com  
1

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