Datasheet > SI4684DY

SI4684DY

更新时间： 2024-11-01 21:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	240K
描述
N-Channel 30-V (D-S) MOSFET

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SI4684DY 数据手册

SPICE Device Model Si4684DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 10-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

www.vishay.com

Document Number: 73360

S-50586Rev. A, 04-Apr-05

12 3

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SI4684DY_06	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
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SI4684DY-RC		获取价格	R-C Thermal Model Parameters
SI4684DY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
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SI4685	SILICON	获取价格	EVALUATION BOARD TEST PROCEDURE
Si4686DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4686DY-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4686DY-T1-GE3	VISHAY	获取价格	MOSFET N-CH 30V 18.2A 8-SOIC
SI4688	SILICON	获取价格	EVALUATION BOARD TEST PROCEDURE