Datasheet > SI4668DY-T1-GE3

SI4668DY-T1-GE3

更新时间： 2024-02-16 03:04:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	238K
描述
Small Signal Field-Effect Transistor,

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SI4668DY-T1-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.32
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI4668DY-T1-GE3 数据手册

Si4668DY

Vishay Siliconix

N-Channel 25-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^a

16.2

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Available

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

0.0105 at V_GS= 10 V

0.0125 at V_GS= 4.5 V

•

12.4 nC

APPLICATIONS

•

Synchronous Buck

- High Side

SO-8

Top View

Ordering Information: Si4668DY-T1-E3 (Lead (Pb)-free)

Si4668DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

16.2

11.5^{b, c}

9.2^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

4.5

2.2^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

11.25

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.2

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 95 °C/W.

Document Number: 69513

S09-0394-Rev. B, 09-Mar-09

www.vishay.com

12 3 4 5 6 7...10

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