Datasheet > SI4670DY_RC

SI4670DY_RC

更新时间： 2024-11-02 03:43:31

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R-C Thermal Model Parameters

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SI4670DY_RC 数据手册

Si4670DY_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Case

N/A

Foot Ch2

11.6583

3.6731

Junction to

RT1

Ambient Ch1

6.9442

Ambient Ch2

6.9442

Foot Ch1

11.6583

3.6731

RT2

30.0404

RT3

25.8463

8.9996

RT4

47.1691

46.1691

19.6690

Thermal Capacitance (Joules/°C)

Case

N/A

Foot Ch2

2.2210 m

Junction to

CT1

Ambient Ch1

386.3454 u

57.6804 m

6.9241 m

Ambient Ch2

386.3454 u

57.6804 m

6.9241 m

Foot Ch1

2.2210 m

CT2

170.7109 u

180.0765 m

11.0677 m

170.7109 u

180.0765 m

11.0677 m

CT3

CT4

1.1640

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 69737

Revision: 02-Oct-07

www.vishay.com

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