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SI4662DY-T1-GE3 PDF预览

SI4662DY-T1-GE3

更新时间: 2024-09-28 21:18:03
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
7页 96K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

SI4662DY-T1-GE3 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):18.6 A最大漏源导通电阻:0.01 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4662DY-T1-GE3 数据手册

 浏览型号SI4662DY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4662DY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4662DY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4662DY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4662DY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4662DY-T1-GE3的Datasheet PDF文件第7页 
Si4662DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
ID (A)a  
18.6  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
Available  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
0.010 at VGS = 10 V  
0.014 at VGS = 4.5 V  
11 nC  
30  
15.7  
APPLICATIONS  
High-Side Switch  
- Notebook DC/DC  
- Server DC/DC  
SO-8  
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4662DY-T1-E3 (Lead (Pb)-free)  
Si4662DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
30  
Unit  
V
20  
TC = 25 °C  
TC = 70 °C  
18.6  
14.9  
12.9b, c  
10.2b, c  
60  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
5.6  
2.7b, c  
25  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
L = 0.1 mH  
C = 25 °C  
IAS  
EAS  
Single Pulse Avalanche Current  
Avalanche Energy  
mJ  
W
31  
6.25  
4.0  
3.0b, c  
1.9b, c  
T
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
PD  
Maximum Power Dissipation  
T
TJ, Tstg  
°C  
Operating Junction and Storage Temperature Range  
- 55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
RthJF  
Typical  
33  
Maximum  
Unit  
t 10 s  
Steady State  
42  
20  
°C/W  
16  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 90 °C/W.  
Document Number: 70446  
S09-0394-Rev. B, 09-Mar-09  
www.vishay.com  
1

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