Datasheet > SI4630DY

SI4630DY

更新时间： 2022-10-18 18:27:36

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	239K
描述
N-Channel 25-V (D-S) MOSFET

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SI4630DY 数据手册

Si4630DY

Vishay Siliconix

N-Channel 25-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ)

Available

TrenchFET^®Power MOSFET

100 % R_gTested

0.0027 at V_GS= 10 V

0.0032 at V_GS= 4.5 V

•

49 nC

APPLICATIONS

•

Synchronous Buck - Low Side

- Notebook

- Server

- Workstation

•

Synchronous Rectifier - POL

SO-8

Top View

Ordering Information: Si4630DY-T1-E3 (Lead (Pb)-free)

Si4630DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

27^{b, c}

21^{b, c}

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

7.0

3.0^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

7.8

5.0

3.5^{b, c}

P_D

Maximum Power Dissipation

2.2^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

R_thJA

R_thJF

t ≤ 10 s

°C/W

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

Document Number: 73685

S09-0138-Rev. C, 02-Feb-09

www.vishay.com

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