Datasheet > SI4646DY-T1-E3

SI4646DY-T1-E3

更新时间： 2024-02-17 14:23:14

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	204K
描述
MOSFET N-CH 30V 12A 8SOIC

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SI4646DY-T1-E3 数据手册

New Product

Si4646DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω)

I_D(A)^a

Q_g(Typ.)

•

Halogen-free According to IEC 61249-2-21

Definition

12^e

0.0115 at V_GS= 10 V

0.0145 at V_GS= 4.5 V

•

SkyFET^®Monolithic TrenchFET^®Power

MOSFET and Schottky Diode

100 % R_gand UIS Tested

13.7 nC

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook PC

- System Power

SO-8

•

Buck Converter

Synchronous Rectifier Switch

Schottky Diode

Top View

Ordering Information:

Si4646DY-T1-E3 (Lead (Pb)-free)

Si4646DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

12^e

12^{b, c}

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

9.5^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

5.6

2.7^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

6.25

4.0

3.0^{b, c}

1.9^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typ.

Max.

Unit

°C/W

t ≤ 10 s

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 90 °C/W.

e. Package limited.

Document Number: 68762

S09-0868-Rev. B, 18-May-09

www.vishay.com

12 3 4 5 6 7...9

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