生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (ID): | 40 A | 最大漏源导通电阻: | 0.0027 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 690 pF |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
Si4634-A10-GM | SILICON |
获取价格 |
Silicon Labs is updating the Si4682/4/8 data sheets | |
SI4634DY | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI4634DY (KI4634DY) | KEXIN |
获取价格 |
N-Channel MOSFET | |
SI4634DY-T1-E3 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI4634DY-T1-GE3 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI4636DY-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 17 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FE | |
SI4636DY-T1-GE3 | VISHAY |
获取价格 |
N-CH 30-V (D-S) MOSFET W/SCHOTTKY DIODE - Tape and Reel | |
Si4638-A10-GM | SILICON |
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Silicon Labs is updating the Si4682/4/8 data sheets | |
SI4638CDY-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET | |
SI4642DY | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET with Schottky Diode |