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SI4501BDY PDF预览

SI4501BDY

更新时间: 2024-11-20 09:26:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
15页 277K
描述
Complementary (N- and P-Channel) MOSFET

SI4501BDY 数据手册

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Si4501BDY  
Vishay Siliconix  
Complementary (N- and P-Channel) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) ()  
Qg (Typ.)  
I
D (A)a  
12  
0.017 at VGS = 10 V  
0.020 at VGS = 4.5 V  
0.027 at VGS = - 4.5 V  
0.037 at VGS = - 2.5 V  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
N-Channel  
P-Channel  
30  
7.9  
11  
- 8  
Compliant to RoHS Directive 2002/95/EC  
- 8  
16.5  
- 6.8  
APPLICATIONS  
Level Shift  
S
2
Load Switch  
SO-8  
G
2
S
1
D
D
D
D
1
2
3
4
8
7
6
5
G
1
D
S
2
G
2
G
1
Top View  
Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
1
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
N-Channel  
P-Channel  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
12  
9.5  
- 8  
8
V
VGS  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
- 8  
- 6.4  
Continuous Drain Current (TJ = 150 °C)  
ID  
9b, c  
- 6.4b, c  
T
7.2b, c  
- 5.1b, c  
TA = 70 °C  
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
Source-Drain Current Diode Current  
40  
- 40  
A
TC = 25 °C  
TA = 25 °C  
4.0  
- 2.8  
2.2b, c  
40  
- 1.8b, c  
- 40  
ISM  
IAS  
Pulsed Source-Drain Current  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
5
- 5  
1.25  
3.1  
L = 0.1 mH  
EAS  
1.25  
4.5  
2.8  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.0  
PD  
Maximum Power Dissipation  
2.5b, c  
1.6b, c  
2b, c  
1.28b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
N-Channel  
Typ. Max.  
P-Channel  
Parameter  
Symbol  
RthJA  
Unit  
Typ.  
52  
32  
Max.  
62.5  
40  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
t 10 s  
40  
22  
50  
28  
°C/W  
RthJF  
Steady State  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under steady state conditions is 95 °C/W (N-Channel) and 110 °C/W (P-Channel).  
Document Number: 67441  
S11-0245-Rev. A, 14-Feb-11  
www.vishay.com  
1

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