Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) ()
Qg (Typ.)
I
D (A)a
12
0.017 at VGS = 10 V
0.020 at VGS = 4.5 V
0.027 at VGS = - 4.5 V
0.037 at VGS = - 2.5 V
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
N-Channel
P-Channel
30
7.9
11
- 8
Compliant to RoHS Directive 2002/95/EC
- 8
16.5
- 6.8
APPLICATIONS
•
Level Shift
S
2
•
Load Switch
SO-8
G
2
S
1
D
D
D
D
1
2
3
4
8
7
6
5
G
1
D
S
2
G
2
G
1
Top View
Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
30
20
12
9.5
- 8
8
V
VGS
T
C = 25 °C
TC = 70 °C
A = 25 °C
- 8
- 6.4
Continuous Drain Current (TJ = 150 °C)
ID
9b, c
- 6.4b, c
T
7.2b, c
- 5.1b, c
TA = 70 °C
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
40
- 40
A
TC = 25 °C
TA = 25 °C
4.0
- 2.8
2.2b, c
40
- 1.8b, c
- 40
ISM
IAS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
5
- 5
1.25
3.1
L = 0.1 mH
EAS
1.25
4.5
2.8
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.0
PD
Maximum Power Dissipation
2.5b, c
1.6b, c
2b, c
1.28b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Typ. Max.
P-Channel
Parameter
Symbol
RthJA
Unit
Typ.
52
32
Max.
62.5
40
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
40
22
50
28
°C/W
RthJF
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
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