Datasheet > SI4511DY_09

SI4511DY_09

更新时间： 2024-11-24 11:57:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	281K
描述
N- and P-Channel 20-V (D-S) MOSFET

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SI4511DY_09 数据手册

Si4511DY

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

9.6

Definition

TrenchFET^®Power MOSFET

Compliant to RoHS directive 2002/95/EC

0.0145 at V_GS= 10 V

0.017 at V_GS= 4.5 V

0.033 at V_GS= - 4.5 V

0.050 at V_GS= - 2.5 V

•

N-Channel

P-Channel

8.6

- 6.2

- 5

APPLICATIONS

- 20

•

Level Shift

•

Load Switch

SO-8

Top View

Ordering Information: Si4511DY-T1-E3 (Lead (Pb)-free)

Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

Parameter

Symbol

V_DS

Unit

10 s

Steady State

10 s

Steady State

- 20

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

9.6

7.7

7.2

5.8

- 6.2

- 4.9

- 4.6

- 3.7

- 40

- 0.9

1.1

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

1.7

0.9

1.1

0.7

- 1.7

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

1.3

0.7

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Parameter

Symbol

R_thJA

Unit

Typ.

Max.

62.5

110

Typ.

Max.

62.5

110

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t ≤ 10 s.

Document Number: 72223

S09-0867-Rev. E, 18-May-09

www.vishay.com

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