SI4539

更新时间： 2024-11-19 22:33:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	240K
描述
Dual N & P-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI4539 数据手册

January 2001

Si4539DY

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These dual N- and P -Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for low

voltage applications such as notebook computer power

management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

N-Channel 7.0 A,30 V, R_DS(ON)=0.028 W @ V_GS=10 V

_DS(ON)=0.040 W @ V_GS= 4.5 V.

P-Channel -5.0 A,-30 V,R_DS(ON)=0.052 W @ V_GS=-10 V

_DS(ON)=0.080W @ V_GS=-4.5 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

SuperSOT^TM-6

SOT-23

SuperSOT^TM-8

SO-8

SOT-223

SOIC-16

pin 1

SO-8

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

N-Channel

P-Channel

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

-30

-20

-5

Drain Current - Continuous

- Pulsed

(Note 1a)

-20

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

R_q

Si4539DY Rev. A

12 3 4 5 6 7...9

中文翻译

下载PDF

与SI4539相关器件

型号	品牌	获取价格	描述	数据表
SI4539ADY	VISHAY	获取价格	N- and P-Channel 30-V (D-S) MOSFET
SI4539ADY_05	VISHAY	获取价格	N- and P-Channel 30-V (D-S) MOSFET
SI4539ADY-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel and P-Channel,
SI4539ADY-T1	VISHAY	获取价格	N- and P-Channel 30-V (D-S) MOSFET
SI4539ADY-T1-E3	VISHAY	获取价格	TRANSISTOR 4400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPL
SI4539DY	FAIRCHILD	获取价格	Dual N & P-Channel Enhancement Mode Field Effect Transistor
SI4539DY	VISHAY	获取价格	Transistor,
SI4539DY_NL	FAIRCHILD	获取价格	暂无描述
SI4539DYF011	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, N-Channel and P-Channel,
SI4539DYL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel,