Datasheet > SI4539ADY_05

SI4539ADY_05

更新时间： 2024-02-06 01:44:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	93K
描述
N- and P-Channel 30-V (D-S) MOSFET

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SI4539ADY_05 数据手册

Si4539ADY

Vishay Siliconix

N- and P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.036 @ V = 10 V

5.9

4.9

N-Channel

P-Channel

0.053 @ V = 4.5 V

0.053 @ V = -10 V

-4.9

-3.7

-30

0.090 @ V = -4.5 V

SO-8

Top View

Ordering Information: Si4539ADY

Si4539ADY-T1 (with Tape and Reel)

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

10 secs Steady State

10 secs

Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"20

= 25_C

= 70_C

5.9

4.7

4.4

3.6

-4.9

-3.9

-3.7

-2.9

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

2.0

1.3

0.9

1.1

0.7

-1.7

-0.9

1.1

= 25_C

= 70_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Typ

Max

Typ

Max

Parameter

Symbol

Unit

t v 10 sec

62.5

110

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71131

S-03951—Rev. B, 26-May-03

www.vishay.com

2-1

12 3 4 5 6 7 8

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