Datasheet > Si4534DY

Si4534DY

更新时间： 2024-11-25 14:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	243K
描述
N- and P-Channel 60 V (D-S) MOSFET

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Si4534DY 数据手册

Si4534DY

Vishay Siliconix

www.vishay.com

N- and P-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

SO-8 Dual

D₂

ꢀ

D₂

D₁

• 100 % R_gand UIS tested

D₁

• Fully lead (Pb)-free device

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Available

G₂

S₂

APPLICATIONS

• CCFL Inverter

• FAN control

G₁

S₁

Top View

PRODUCT SUMMARY

• Load switch

N-CHANNEL

P-CHANNEL

V_DS(V)

0.029

0.038

3.3

-60

0.120

0.1ꢀ0

_DS(on)() at V_GS

10 V

4.ꢀ V

Q_gtyp. (nC)

_D(A) ^a

Configuration

-4.1

N- and p-pair

N-Channel MOSFET

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SO-8

Si4ꢀ34DY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 2ꢀ °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

N-CHANNEL

P-CHANNEL

-60

UNIT

V_DS

V_GS

8 ^a

-4.1

-3.3

-3 ^{b, c}

-2.4 ^{b, c}

-2ꢀ

T_C= 2ꢀ °C

T_C= 70 °C

T_A= 2ꢀ °C

T_A= 70 °C

6.6

Continuous drain current (T_J= 1ꢀ0 °C)

I_D

6.2 ^{b, c}

ꢀ ^{b, c}

Pulsed drain current (10 μs pulse width)

Source drain current diode current

I_DM

I_S

_C= 2ꢀ °C

T_A= 2ꢀ °C

1.7 ^{b, c}

-1.7 ^{b, c}

1ꢀ

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

ꢀ

3.6

2.3

2 ^{b, c}

1.3 ^{b, c}

3.6

2.3

2 ^{b, c}

1.3 ^{b, c}

_C= 2ꢀ °C

_C= 70 °C

Maximum power dissipation

P_D

T_A= 2ꢀ °C

T_A= 70 °C

Operating junction and storage temperature range

T_J, T_stg

-ꢀꢀ to +1ꢀ0

°C

THERMAL RESISTANCE RATINGS

N-CHANNEL

P-CHANNEL

PARAMETER

SYMBOL

UNIT

TYP.

ꢀ0

MAX.

62.ꢀ

3ꢀ

TYP.

ꢀ0

MAX.

62.ꢀ

Maximum junction-to-ambient ^{b, d}

Maximum junction-to-foot (drain)

t  10 s

Steady state

R_thJA

R_thJF

°C/W

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 110 °C/W for N-channel and P-channel

S22-0803-Rev. A, 26-Sep-2022

Document Number: 62110

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...12

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与Si4534DY相关器件

型号	品牌	获取价格	描述	数据表
SI4539	FAIRCHILD	获取价格	Dual N & P-Channel Enhancement Mode Field Effect Transistor
SI4539ADY	VISHAY	获取价格	N- and P-Channel 30-V (D-S) MOSFET
SI4539ADY_05	VISHAY	获取价格	N- and P-Channel 30-V (D-S) MOSFET
SI4539ADY-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel and P-Channel,
SI4539ADY-T1	VISHAY	获取价格	N- and P-Channel 30-V (D-S) MOSFET
SI4539ADY-T1-E3	VISHAY	获取价格	TRANSISTOR 4400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPL
SI4539DY	FAIRCHILD	获取价格	Dual N & P-Channel Enhancement Mode Field Effect Transistor
SI4539DY	VISHAY	获取价格	Transistor,
SI4539DY_NL	FAIRCHILD	获取价格	暂无描述
SI4539DYF011	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, N-Channel and P-Channel,

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