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SI4532ADY-E3 PDF预览

SI4532ADY-E3

更新时间: 2024-02-03 01:02:27
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
8页 105K
描述
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4532ADY-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.14配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):3.7 A
最大漏源导通电阻:0.053 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SI4532ADY-E3 数据手册

 浏览型号SI4532ADY-E3的Datasheet PDF文件第2页浏览型号SI4532ADY-E3的Datasheet PDF文件第3页浏览型号SI4532ADY-E3的Datasheet PDF文件第4页浏览型号SI4532ADY-E3的Datasheet PDF文件第5页浏览型号SI4532ADY-E3的Datasheet PDF文件第6页浏览型号SI4532ADY-E3的Datasheet PDF文件第7页 
Si4532ADY  
Vishay Siliconix  
N- and P-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.053 @ V = 10 V  
4.9  
4.1  
GS  
N-Channel  
P-Channel  
30  
0.075 @ V = 4.5 V  
GS  
0.080 @ V = -10 V  
-3.9  
-3.0  
GS  
-30  
0.135 @ V = -4.5 V  
GS  
D
1
S
2
SO-8  
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
G
2
G
1
S
2
2
G
1
G
Top View  
S
1
D
2
Ordering Information: Si4532ADY  
Si4532ADY-T1 (with Tape and Reel)  
N-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
N-Channel  
P-Channel  
10 secs Steady State  
10 secs  
Steady State  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
-30  
DS  
V
V
GS  
"20  
"20  
T
= 25_C  
= 70_C  
4.9  
3.9  
3.7  
2.9  
-3.9  
-3.1  
-3.0  
-2.4  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
1.7  
2
0.94  
1.13  
0.73  
-1.7  
2
-1.0  
1.2  
S
T
A
= 25_C  
= 70_C  
a
Maximum Power Dissipation  
P
W
D
T
A
1.3  
1.3  
0.76  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
N-Channel  
P-Channel  
Typ  
Max  
Typ  
Max  
Parameter  
Symbol  
Unit  
t v 10 sec  
55  
90  
40  
62.5  
110  
50  
54  
87  
34  
62.5  
105  
45  
a
Maximum Junction-to-Ambient  
R
thJA  
thJF  
Steady State  
_C/W  
Maximum Junction-to-Foot (Drain)  
Steady State  
R
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71133  
S-31989—Rev.. B, 13-Oct-03  
www.vishay.com  
2-1  

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