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SI4532ADY-T1-GE3 PDF预览

SI4532ADY-T1-GE3

更新时间: 2024-02-29 22:37:55
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
10页 183K
描述
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SI4532ADY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.14配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):3.7 A
最大漏源导通电阻:0.053 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SI4532ADY-T1-GE3 数据手册

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Si4532ADY  
Vishay Siliconix  
N- and P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)  
4.9  
Available  
TrenchFET® Power MOSFETs  
100 % Rg Tested  
0.053 at VGS = 10 V  
0.075 at VGS = 4.5 V  
0.080 at VGS = - 10 V  
0.135 at VGS = - 4.5 V  
N-Channel  
P-Channel  
30  
4.1  
Compliant to RoHS Directive 2002/95/EC  
- 3.9  
- 3.0  
- 30  
S
2
D
1
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
2
G
1
G
Top View  
D
2
S
1
Ordering Information:  
Si4532ADY-T1-E3 (Lead (Pb-free)  
Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free)  
P-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
N-Channel  
P-Channel  
Parameter  
Symbol  
VDS  
Unit  
10 s  
Steady State  
10 s  
Steady State  
Drain-Source Voltage  
Gate-Source Voltage  
30  
- 30  
20  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
4.9  
3.9  
3.7  
2.9  
- 3.9  
- 3.0  
- 2.4  
Continuous Drain Current (TJ = 150 °C)a  
ID  
- 3.1  
A
IDM  
IS  
Pulsed Drain Current  
20  
Continuous Source Current (Diode Conduction)a  
TA = 25 °C  
TA = 70 °C  
1.7  
2
0.94  
1.13  
0.73  
- 1.7  
2
- 1.0  
1.2  
Maximum Power Dissipationa  
PD  
W
1.3  
1.3  
0.76  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
N-Channel  
P-Channel  
Parameter  
Symbol  
RthJA  
Unit  
Typ.  
55  
Max.  
62.5  
110  
50  
Typ.  
54  
Max.  
62.5  
105  
45  
t 10 s  
Maximum Junction-to-Ambienta  
Steady State  
Steady State  
90  
87  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
40  
34  
Note:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 71133  
S11-1908-Rev. D, 26-Sep-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SI4532ADY-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI4532ADY-T1-E3 VISHAY

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