SI4511DY

更新时间： 2024-10-25 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	78K
描述
N- and P-Channel 20-V (D-S) MOSFET

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SI4511DY 数据手册

Si4511DY

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.0145 @ V = 10 V

9.6

8.6

N-Channel

P-Channel

0.017 @ V = 4.5 V

D Level Shift

D Load Switch

0.033 @ V = −4.5 V

−6.2

−5

−20

0.050 @ V = −2.5 V

SO-8

Top View

Ordering Information: Si4511DY

Si4511DY-T1 (with Tape and Reel)

Si4511DY—E3 (Lead (Pb)-Free)

Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

10 sec. Steady State 10 sec. Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"16

"12

= 25_C

= 70_C

9.6

7.7

7.2

5.8

−6.2

−4.9

−4.6

−3.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−40

Continuous Source Current (Diode Conduction)

1.7

0.9

1.1

0.7

−1.7

0.9

1.1

0.7

= 25_C

= 70_C

Maximum Power Dissipation

1.3

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

N-Channel

P- Channel

Typ

Max

Typ

Max

Parameter

Symbol

Unit

t v 10 sec

62.5

110

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

Steady-State

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on FR4 Board.

b. t v 10 sec

Document Number: 72223

S-41496—Rev. B, 09-Aug-04

www.vishay.com

12 3 4 5 6 7 8

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