Datasheet > SI4511DY_06

SI4511DY_06

更新时间： 2024-11-20 04:04:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	127K
描述
N- and P-Channel 20-V (D-S) MOSFET

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SI4511DY_06 数据手册

Si4511DY

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

9.6

Pb-free

0.0145 at V_GS= 10 V

0.017 at V_GS= 4.5 V

0.033 at V_GS= - 4.5 V

0.050 at V_GS= - 2.5 V

Available

APPLICATIONS

N-Channel

P-Channel

RoHS*

8.6

•

Level Shift

COMPLIANT

•

Load Switch

- 6.2

- 5

- 20

SO-8

Top View

Ordering Information:

Si4511DY-T1

Si4511DY-T1-E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

10 secs Steady

10 secs

Steady

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Unit

- 20

V_GS

T_A= 25 °C

T_A= 70 °C

9.6

7.7

7.2

5.8

- 6.2

- 4.9

- 4.6

- 3.7

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

Pulsed Drain Current

I_DM

I_S

- 40

Continuous Source Current (Diode Conduction)^a

T_A= 25 °C

_A= 70 °C

1.7

0.9

1.1

0.7

- 1.7

0.9

1.1

0.7

Maximum Power Dissipation^a

P_D

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

N-Channel

Typ Max

P-Channel

Typ

Max

62.5

110

Parameter

Symbol

Unit

t ≤ 10 sec

Steady State

62.5

110

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

°C/W

R_thJF

Notes

a. Surface Mounted on 1" x 1" FR4 Board.

b. t ≤ 10 sec

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72223

S-61005-Rev. D, 12-Jun-06

www.vishay.com

12 3 4 5 6 7...9

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