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SI4497DY PDF预览

SI4497DY

更新时间: 2022-10-18 18:29:29
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 128K
描述
P-Channel 30 V (D-S) MOSFET

SI4497DY 数据手册

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New Product  
Si4497DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
0.1  
P
DM  
0.05  
t
1
t
2
t
1
1. Duty Cycle, D =  
t
2
0.02  
2. Per Unit Base = R  
= 80 °C/W  
thJA  
(t)  
3. T - T  
= P  
Z
JM  
A
DM thJA  
4. Surface Mounted  
Single Pulse  
0.01  
-3  
-2  
-1  
10  
10  
10  
1
10  
100  
1000  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
10  
1
10  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?65748.  
www.vishay.com  
6
Document Number: 65748  
S10-0639-Rev. A, 22-Mar-10  

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