SI4500BDY

更新时间： 2024-10-25 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	79K
描述
Complementary MOSFET Half-Bridge (N- and P-Channel)

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SI4500BDY 数据手册

Si4500BDY

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

0.020 @ V = 4.5 V

9.1

7.5

N-Channel

P-Channel

0.030 @ V = 2.5 V

0.060 @ V = −4.5 V

−5.3

−4.1

−20

0.100 @ V = −2.5 V

SO-8

Top View

Ordering Information: Si4500BDY

Si4500BDY-T1 (with Tape and Reel)

Si4500BDY—E3 (Lead (Pb)-Free)

Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

10 sec. Steady State 10 sec. Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"12

= 25_C

= 70_C

9.1

7.3

6.6

5.3

−5.3

−4.9

−3.8

−3.1

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−20

Continuous Source Current (Diode Conduction)

2.1

2.5

1.6

1.1

1.3

0.8

−2.1

2.5

−1.1

1.3

= 25_C

= 70_C

Maximum Power Dissipation

1.6

0.8

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

N-Channel

P- Channel

Typ

Max

Typ

Max

Parameter

Symbol

Unit

t v 10 sec

Maximum Junction-to-Ambient

thJA

thJF

Steady-State

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on FR4 Board.

b. t v 10 sec

Document Number: 72281

S-41428—Rev. B, 26-Jul-04

www.vishay.com

12 3 4 5 6 7 8

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SI4500BDY 替代型号

型号	品牌	替代类型	描述	数据表
SI4532ADY-T1-E3	VISHAY	完全替代	Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel,
BSO110N03MSGXUMA1	INFINEON	功能相似	Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

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