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SI4500BDY-T1-E3 PDF预览

SI4500BDY-T1-E3

更新时间: 2024-10-25 22:33:51
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
8页 79K
描述
Complementary MOSFET Half-Bridge (N- and P-Channel)

SI4500BDY-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:184125
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:8-Pin Narrow SOIC
Samacsys Released Date:2015-04-13 16:59:09Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):6.6 A最大漏极电流 (ID):6.6 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

SI4500BDY-T1-E3 数据手册

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Si4500BDY  
Vishay Siliconix  
Complementary MOSFET Half-Bridge (N- and P-Channel)  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.020 @ V = 4.5 V  
9.1  
7.5  
GS  
N-Channel  
P-Channel  
20  
0.030 @ V = 2.5 V  
GS  
0.060 @ V = 4.5 V  
5.3  
4.1  
GS  
20  
0.100 @ V = 2.5 V  
GS  
SO-8  
S
2
S
G
S
D
D
D
D
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
D
Top View  
Ordering Information: Si4500BDY  
Si4500BDY-T1 (with Tape and Reel)  
Si4500BDY—E3 (Lead (Pb)-Free)  
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)  
S
1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
N-Channel  
P-Channel  
10 sec. Steady State 10 sec. Steady State  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
20  
DS  
V
V
GS  
"12  
"12  
T
= 25_C  
= 70_C  
9.1  
7.3  
6.6  
5.3  
5.3  
4.9  
3.8  
3.1  
A
a,  
b
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
30  
20  
DM  
a,  
b
Continuous Source Current (Diode Conduction)  
I
2.1  
2.5  
1.6  
1.1  
1.3  
0.8  
2.1  
2.5  
1.1  
1.3  
S
T
= 25_C  
= 70_C  
A
a,  
b
Maximum Power Dissipation  
P
W
D
T
A
1.6  
0.8  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
N-Channel  
P- Channel  
Typ  
Max  
Typ  
Max  
Parameter  
Symbol  
Unit  
t v 10 sec  
40  
75  
20  
50  
95  
22  
41  
75  
23  
50  
95  
26  
a
Maximum Junction-to-Ambient  
R
thJA  
thJF  
Steady-State  
Steady-State  
_C/W  
Maximum Junction-to-Foot (Drain)  
R
Notes  
a. Surface Mounted on FR4 Board.  
b. t v 10 sec  
Document Number: 72281  
S-41428—Rev. B, 26-Jul-04  
www.vishay.com  
1

SI4500BDY-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI4500BDY-T1-GE3 VISHAY

完全替代

Complementary MOSFET Half-Bridge (N- and P-Channel)

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