Datasheet > SI4497DY

SI4497DY

更新时间： 2022-10-18 18:29:29

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	128K
描述
P-Channel 30 V (D-S) MOSFET

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Si4497DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

125

150

- Case Temperature (°C)

Current Derating*

2.0

1.6

1.2

0.8

0.4

0.0

100

125

150

100

125

150

- Case Temperature (°C)

- Ambient Temperature (°C)

Power Derating, Junction-to-Foot

Power Derating, Junction-to-Ambient

* The power dissipation P_Dis based on T_J(max)= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Document Number: 65748

S10-0639-Rev. A, 22-Mar-10

www.vishay.com

1 2 3 456 7

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