Datasheet > SI4500BDY_09

SI4500BDY_09

更新时间： 2024-11-20 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	278K
描述
Complementary MOSFET Half-Bridge (N- and P-Channel)

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SI4500BDY_09 数据手册

Si4500BDY

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

I_D(A)

9.1

0.020 at V_GS= 4.5 V

0.030 at V_GS= 2.5 V

0.060 at V_GS= - 4.5 V

0.100 at V_GS= - 2.5 V

• TrenchFET^®Power MOSFET

N-Channel

P-Channel

7.5

•

Compliant to RoHS Directive 2002/95/EC

- 5.3

- 4.1

- 20

SO-8

Top View

Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free)

Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

Parameter

Symbol

V_DS

Unit

10 s

Steady State

10 s

Steady State

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

_A= 70 °C

9.1

7.3

6.6

5.3

- 5.3

- 4.9

- 3.8

- 3.1

Continuous Drain Current (T_J= 150 °C)^a,b

I_D

I_DM

I_S

Pulsed Drain Current

- 20

Continuous Source Current (Diode Conduction)^a,b

T_A= 25 °C

T_A= 70 °C

2.1

2.5

1.6

1.1

1.3

0.8

- 2.1

2.5

- 1.1

1.3

Maximum Power Dissipation^a,b

P_D

1.6

0.8

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Parameter

Symbol

R_thJA

Unit

Typ.

Max.

Typ.

Max.

t ≤ 10 s

Maximum Junction-to-Ambient^a

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

Document Number: 72281

S09-0705-Rev. D, 27-Apr-09

www.vishay.com

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