New Product
Si4497DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
V
DS Temperature Coefficient
- 26
5.5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1.0
- 30
- 2.5
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 20 A
0.0027
0.0038
75
0.0033
0.0046
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = - 4.5 V, ID = - 15 A
VDS = - 10 V, ID = - 20 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
9685
995
995
190
90
VDS = - 15 V, VGS = 0 V, f = 1 MHz
DS = - 15 V, VGS = - 10 V, ID = - 20 A
pF
V
285
135
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
V
DS = - 15 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
27.5
26.5
2.3
19
0.5
4.6
35
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
V
DD = - 15 V, RL = 1.5 Ω
13
25
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
115
25
200
50
ns
Turn-On Delay Time
Rise Time
100
75
180
150
180
80
V
DD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
100
42
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 36
- 70
- 1.2
60
A
Body Diode Voltage
IS = - 3 A, VGS = 0 V
- 0.70
31
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
23
45
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
13
ns
Reverse Recovery Rise Time
tb
18
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
5秒后页面跳转
STM32H743技术深度剖析与应用案例探索
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
74HC14芯片资料介绍：性能特性分析、引脚介绍
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
