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SI4500DY-T1-E3 PDF预览

SI4500DY-T1-E3

更新时间: 2024-11-20 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
8页 136K
描述
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4500DY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.2配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):7 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SI4500DY-T1-E3 数据手册

 浏览型号SI4500DY-T1-E3的Datasheet PDF文件第2页浏览型号SI4500DY-T1-E3的Datasheet PDF文件第3页浏览型号SI4500DY-T1-E3的Datasheet PDF文件第4页浏览型号SI4500DY-T1-E3的Datasheet PDF文件第5页浏览型号SI4500DY-T1-E3的Datasheet PDF文件第6页浏览型号SI4500DY-T1-E3的Datasheet PDF文件第7页 
                                                                                                                              
_C/W  
Si4500DY  
Vishay Siliconix  
New Product  
Complementary MOSFET Half-Bridge (N- and P-Channel)  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.030 @ V = 4.5 V  
"7.0  
"6.0  
"4.5  
"3.5  
GS  
N-Channel  
P-Channel  
20  
0.040 @ V = 2.5 V  
GS  
0.065 @ V = –4.5 V  
GS  
–20  
0.100 @ V = –2.5 V  
GS  
S
2
SO-8  
G
G
2
S
1
D
D
D
D
1
2
3
4
8
7
6
5
G
1
D
S
2
G
2
1
Top View  
S
1
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
N-Channel  
P-Channel  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
–20  
"12  
"4.5  
"3.5  
"20  
–1.7  
DS  
GS  
V
V
"12  
"7.0  
"5.5  
"30  
1.7  
T
= 25_C  
= 70_C  
A
a,  
b
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a,  
b
Continuous Source Current (Diode Conduction)  
I
S
T
= 25_C  
= 70_C  
2.5  
1.6  
A
a,  
b
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
N-Channel  
P- Channel  
Typ  
Max  
Typ  
Max  
Parameter  
Symbol  
Unit  
t v 10 sec  
Steady-State  
Steady-State  
38  
73  
17  
50  
95  
22  
40  
73  
20  
50  
95  
26  
a
Maximum Junction-to-Ambient  
R
thJA  
thJC  
Maximum Junction-to-Foot  
R
Notes  
a. Surface Mounted on FR4 Board.  
b. t v 10 sec  
Document Number: 70880  
S-00269—Rev. A, 26-Apr-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  

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