Si3417DV
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
VDS (V)
RDS(on) () Max.
Qg (Typ.)
I
D (A)d,e
100 % Rg and UIS Tested
Material categorization:
0.0252 at VGS = - 10 V
0.0360 at VGS = - 4.5 V
- 8
- 8
- 30
15 nC
For definitions of compliance please see
www.vishay.com/doc?99912
Available
TSOP-6
Top View
APPLICATIONS
•
•
•
•
Load Switches
Adaptor Switch
DC/DC Converter
For Mobile Computing/Consumer
D
D
D
S
1
2
3
6
5
S
3 mm
D
G
G
4
Marking Code
BH XX
2.85 mm
Lot Traceability
and Date Code
D
Part # Code
Ordering Information:
Si3417DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
VDS
Limit
- 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
- 8e
- 8e
- 7.3a, b
- 5.8a, b
- 50
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current (t = 100 µs)
T
C = 25 °C
A = 25 °C
- 3.5
- 1.7a, b
- 20
Continuous Source-Drain Diode Current
T
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
20
mJ
W
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
4.2
2.7
PD
Maximum Power Dissipation
2a, b
1.3a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
40
Maximum
Unit
Maximum Junction-to-Ambienta, c
t 10 s
Steady State
62.5
30
°C/W
Maximum Junction-to-Foot
25
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on TC = 25 °C.
e. Package limited.
Document Number: 62890
S13-1815-Rev. A, 12-Aug-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000