Datasheet > SI2303P_13

SI2303P_13

更新时间： 2024-11-21 01:20:03

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
5页	360K
描述
P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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SI2303P_13 数据手册

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

SI2303

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

•

Halogen free available upon request by adding suffix "-HF"

-30V,-2.6A, R_DS(ON)=130m=@V_GS= -10V

_DS(ON)=180m=@V_GS= -4.5V

High dense cell design for extremely low R_DS(ON)

Rugged and reliable

Lead free product is acquired

SOT-23 Package

Marking Code: S3

P-Channel

Enhancement Mode

-30V,-2.0A,

•

Field Effect Transistor

Epoxy meets UL 94 V-0 flammability rating

SOT-23

Moisture Sensitivity Level 1

Maximum Ratings @ 25^OC Unless Otherwise Specified

1.GATE

Symbol

V_DS

I_D

I_DM

Parameter

Drain-source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

Gate-source Voltage

Rating

-30

-3

-10

Unit

2. SOURCE

3. DRAIN

V_GS

ꢀ20

P_D

Total Power Dissipation

0.25

R/W

Thermal Resistance Junction to Ambient^b

R_E

T_J

Operating Junction Temperature

Storage Temperature

-55 to +150

T_STG

DIMENSIONS

INCHES

MIN

DIM

MAX

.120

.104

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

Internal Block Diagram

.110

.083

.047

.035

.070

.018

.0005

.035

.003

1.78

.45

.013

.89

.100

1.12

.180

.51

.085

.37

.015

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

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Revision: B

2013/01/01

12 3 4 5

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