Datasheet > SI2305B

SI2305B

更新时间： 2024-09-16 14:55:59

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	826K
描述
Tape: 3K/Reel, 120K/Ctn.;

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2305B 数据手册

SI2305B

Features

• Excellent Stability and Uniformity

• High Dense Cell Design for Extremely Low RDS(ON)

• Epoxy Meets UL 94 V-0 Flammability Rating

• Moisture Sensitivity Level 1

Pꢀ&+$11(/

• Halogen Free. “Green” Device ⁽¹⁾

026)(7

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

Thermal Resistance:90°C/W Junction to Ambient(Steady-State)⁽²⁾

SOT-23

•

Parameter

Rating

-20

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

±10

-4.2

T_A=25°C

Continuous Drain Current

I_D

-2.7

-21

1.4

T_A=100°C

Pulsed Drain Current⁽³⁾

I_DM

P_D

Total Power Dissipation⁽⁴⁾

DIMENSIONS

INCHES

Note:

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

2. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz.

Copper, in a still air environment with T_A=25°C. The Power dissipation P_DSMis based on

R_θJAtʇꢀ10s and the maximum allowed junction temperature of 150°C. The value in any

given application depends on the user's specific board design.

0.01 0.15

3. Repetitive rating; pulse width limited by max. junction temperature.

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

4. P_Dis based on max. junction temperature, using junction to ambient thermal resistance.

0.020

0.007

0.022 REF

0.50

0.20

0.55 REF

,QWHUQDOꢀ6WUXFWXUHꢀDQGꢀ0DUNLQJꢀ&RGH

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

1. GATE

2. SOURCE

S5_B.

3. DRAIN

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.4-2-03032023

1/6

MCCSEMI.COM

12 3 4 5 6

中文翻译

下载PDF

与SI2305B相关器件

型号	品牌	获取价格	描述	数据表
SI2305BHE3	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
SI2305B-TP	MCC	获取价格	Power Field-Effect Transistor,
SI2305CDS	VISHAY	获取价格	P-Channel 8 V (D-S) MOSFET
SI2305CDS_13	VISHAY	获取价格	P-Channel 8 V (D-S) MOSFET
SI2305CDS-T1-GE3	VISHAY	获取价格	P-Channel 8 V (D-S) MOSFET
SI2305CHE3	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
SI2305DS	VISHAY	获取价格	P-Channel 1.25-W, 1.8-V (G-S) MOSFET
SI2305DS-E3	VISHAY	获取价格	TRANSISTOR 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236, TO-236, 3 PIN, FET
SI2305DS-T1	VISHAY	获取价格	P-Channel 1.25-W, 1.8-V (G-S) MOSFET
SI2305DS-T1-E3	VISHAY	获取价格	P-Channel 1.25-W, 1.8-V (G-S) MOSFET