SI2304BDS

更新时间： 2024-11-19 22:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	67K
描述
N-Channel 30-V (D-S) MOSFET

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SI2304BDS 数据手册

Si2304BDS

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.070 @ V = 10 V

3.2

2.6

0.105 @ V = 4.5 V

TO-236

(SOT-23)

Top View

Si2304BDS (L4)*

*Marking Code

Ordering Information: Si2304BDS-T1—E3

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

ꢀ

= 25_C

= 70_C

3.2

2.5

2.6

2.1

a, b

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

a, b

Continuous Source Current (Diode Conduction)

0.9

0.62

0.75

0.48

= 25_C

= 70_C

1.08

0.69

a, b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

ꢁ

5 sec

130

115

166

Maximum Junction-to-Ambient

thJA

thJF

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on FR4 Board, t ꢁ 5 sec.

b. Pulse width limited by maximum junction temperature.

c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72503

S-32412—Rev. B, 24-Nov-03

www.vishay.com

12 3 4

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