SI2304DDS

更新时间： 2024-11-18 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	239K
描述
N-Channel 30-V (D-S) MOSFET

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Si2304DDS

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

3.6

Definition

0.060 at V_GS= 10 V

0.075 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

2.1 nC

3.6

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converter

TO-236

(SOT-23)

Top View

Si2304DDS (P4)*

* Marking Code

Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

3.6^a

3.3

2.7

1.4

0.9^{b, c}

1.7

1.1

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

_A= 25 °C

T_C= 25 °C

_C= 70 °C

P_D

Maximum Power Dissipation

1.1^{b, c}

0.7^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

115

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 5 s

Steady State

°C/W

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 130 °C/W.

Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

www.vishay.com

12 3 4 5 6 7...10

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