Datasheet > SI2305CDS_13

SI2305CDS_13

更新时间： 2024-09-15 12:26:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	229K
描述
P-Channel 8 V (D-S) MOSFET

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SI2305CDS_13 数据手册

Si2305CDS

Vishay Siliconix

P-Channel 8 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

Definition

0.035 at V_GS= - 4.5 V

0.048 at V_GS= - 2.5 V

0.065 at V_GS= - 1.8 V

- 5.8

- 5.0

- 4.3

•

TrenchFET^®Power MOSFET

- 8

12 nC

100 % R Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

TO-236

(SOT-23)

•

Load Switch for Portable Devices

•

DC/DC Converter

Top View

Si2305CDS (N5)*

* Marking Code

P-Channel MOSFET

Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 8

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

- 5.8

- 4.7

I_D

Continuous Drain Current (T_J= 150 °C)

- 4.4^{a, b}

- 3.5^{a, b}

- 20

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

T_C= 25 °C

- 1.4

- 0.8^{a, b}

1.7

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

_A= 25 °C

1.1

P_D

Maximum Power Dissipation

0.96^{a, b}

0.62^{a, b}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

130

Unit

R_thJA

t ≤ 5 s

100

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 175 °C/W.

d. T_C= 25 °C.

Document Number: 64847

S10-0720-Rev. C, 29-Mar-10

www.vishay.com

12 3 4 5 6 7...10

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