Datasheet > SI2305ADS

SI2305ADS

更新时间： 2024-09-15 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	139K
描述
P-Channel 8-V (D-S) MOSFET

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SI2305ADS 数据手册

New Product

Si2305ADS

Vishay Siliconix

P-Channel 8-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

• TrenchFET^®Power MOSFET

0.040 at V_GS= - 4.5 V

0.060 at V_GS= - 2.5 V

0.088 at V_GS= - 1.8 V

- 4.1

- 3.4

- 2.0

RoHS

•

100 % R_gTested

COMPLIANT

- 8

7.8 nC

APPLICATIONS

•

Load Switch

DC/DC Converter

TO-236

(SOT-23)

Top View

Si2305ADS (A5)*

* Marking Code

P-Channel MOSFET

Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free)

Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 8

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 5.4

_C= 25 °C

_C= 70 °C

- 4.3

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.1^{a, b}

- 3.3^{a, b}

- 10

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

- 1.4

- 0.8^{a, b}

Continuous Source-Drain Diode Current

T_A= 25 °C

_C= 25 °C

_C= 70 °C

_A= 25 °C

1.7

1.1

P_D

Maximum Power Dissipation

0.96^{a, b}

0.62^{a, b}

- 50 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

Document Number: 69940

S-82713-Rev. C, 10-Nov-08

www.vishay.com

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