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SI2304 PDF预览

SI2304

更新时间: 2024-11-17 22:21:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
12页 253K
描述
N-channel enhancement mode field-effect transistor

SI2304 数据手册

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SI2304DS  
N-channel enhancement mode field-effect transistor  
Rev. 01 — 17 August 2001  
Product data  
M3D088  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™1 technology  
Product availability:  
SI2304DS in SOT23.  
2. Features  
TrenchMOS™ technology  
Very fast switching  
Subminiature surface mount package.  
3. Applications  
Battery management  
High speed switch  
Low power DC to DC converter.  
4. Pinning information  
Table 1:  
Pinning - SOT23, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
3
d
s
2
source (s)  
drain (d)  
3
g
1
2
MBB076  
Top view  
MSB003  
SOT23  
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.  

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