SI2304

更新时间： 2024-10-13 22:21:51

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	253K
描述
N-channel enhancement mode field-effect transistor

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SI2304 数据手册

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 17 August 2001

Product data

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology

Product availability:

SI2304DS in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Low power DC to DC converter.

4. Pinning information

Table 1:

Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

MBB076

Top view

MSB003

SOT23

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

12 3 4 5 6 7...12

中文翻译

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型号	品牌	获取价格	描述	数据表
SI2304A	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
SI2304BDS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304BDS_08	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304BDS-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304BDS-T1-GE3	VISHAY	获取价格	TRANSISTOR 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, HALOGEN FREE AND
SI2304DDS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304DS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304DS	NXP	获取价格	N-channel enhancement mode field-effect transistor
SI2304DS (KI2304DS)	KEXIN	获取价格	N-Channel MOSFET
SI2304DS,215	NXP	获取价格	SI2304DS - N-channel TrenchMOS intermediate level FET TO-236 3-Pin