Datasheet > SI2304

SI2304

更新时间： 2024-11-21 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	505K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2304 数据手册

SI2304

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=30V,R_DS(ON)=60mΩ@V_GS=10V,I_D=3.3A

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

Unit

Gate-source voltage

V_GS

I_D

±20

3.3

Continuous drain current

Pulsed drain current (Note 1)

Power dissipation

I_DM

P_D

0.35

357

150

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

T_J

°C/W

°C

Storage temperature

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

uA V_DS=30V,

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage (note 1)

I_DSS

V^GS=0V

V_DS=0V,

I_GSS

±100 nA

V^GS=±20V

VDS=VGS, ID=250μA

VGS=10V, ID=3.2A

V^GS=4.5V, I^D=2.8A

V^DS=4.5V, I^D=2.5A

f=1.0MHz

V_GS(th)

1.55

2.2

mΩ

Drain-source on-resistance (note 1)

R_DS(ON)

Forward transconductance (note 1)

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

g_FS

R_g

2.5

0.8

4.4

235

8.8

C_iss

C_oss

C_rss

t_d(on)

t_r

V_{DS=15V, VGS=0V, f=1MHz}

VDD=15V, VGEN=10V,

Rg=1Ω, ID≈2.7A,RL=5.6Ω

t_d(off)

t_f

4.5

2.1

0.85

0.65

0.8

6.7

3.2

nC VDS=15V,VGS=10V,ID=3.4A

nC VDS=15V,VGS=4.5V,ID=3.4A

Total gate charge

Q_g

Gate-source charge

Gate-drain charge

Diode forward voltage (note 1)

Diode forward current-continuous

Diode forward current-pulsed

Q_gs

Q_gd

V_SD

I_S

1.2

1.4

IS=2.7A, VGS=0V

TC=25

°C

I_SM

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 4

E-mail:hkt@heketai.com

12 3 4

中文翻译

下载PDF

与SI2304相关器件

型号	品牌	获取价格	描述	数据表
SI2304A	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
SI2304BDS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304BDS_08	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304BDS-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304BDS-T1-GE3	VISHAY	获取价格	TRANSISTOR 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, HALOGEN FREE AND
SI2304DDS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304DS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2304DS	NXP	获取价格	N-channel enhancement mode field-effect transistor
SI2304DS (KI2304DS)	KEXIN	获取价格	N-Channel MOSFET
SI2304DS,215	NXP	获取价格	SI2304DS - N-channel TrenchMOS intermediate level FET TO-236 3-Pin