Datasheet > SI2304

SI2304

更新时间： 2024-11-18 09:26:15

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
5页	414K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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SI2304 数据手册

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

SI2304

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

N-Channel

Enhancement Mode

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

•

30V,2.5A, R_DS(ON)=65m=@V_GS=10V

Field Effect Transistor

30V,2.0A,

R_DS(ON)=90m=@V_GS=4.5V

•

High dense cell design for extremely low R_DS(ON)

Rugged and reliable

Lead free product is acquired

SOT-23 Package

SOT-23

Marking Code: S4

1.GATE

2. SOURCE

3. DRAIN

Maximum Ratings @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Rating

Unit

V_DS

Drain-source Voltage

I_D

I_DM

V_GS

Drain Current-Continuous

Drain Current-Pulsed

Gate-source Voltage

2.5

ꢀ20

0.25

P_D

Total Power Dissipation

Thermal Resistance Junction to Ambient

R_E

T_J

R/W

500

-55 to +150

Operating Junction Temperature

Storage Temperature

T_STG

-55 to +150

DIMENSIONS

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

Internal Block Diagram

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

1.78

.45

.013

.89

.100

1.12

.180

.51

.085

.37

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4 5

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