生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.63 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 1.7 A | 最大漏源导通电阻: | 0.24 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI2303P_13 | MCC |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor | |
SI2304 | NXP |
获取价格 |
N-channel enhancement mode field-effect transistor | |
SI2304 | MCC |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
SI2304 | HC |
获取价格 |
SOT-23 | |
SI2304 | HOTTECH |
获取价格 |
SOT-23 | |
SI2304A | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
SI2304BDS | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI2304BDS_08 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI2304BDS-T1-E3 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI2304BDS-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, HALOGEN FREE AND |